Method of Forming an Electrically Conductive Line

ABSTRACT

A method of forming a crystalline phase material includes, a) providing a stress inducing material within or operatively adjacent a crystalline material of a first crystalline phase; and b) annealing the crystalline material of the first crystalline phase under conditions effective to transform it to a second crystalline phase. The stress inducing material preferably induces compressive stress within the first crystalline phase during the anneal to the second crystalline phase to lower the required activation energy to produce a more dense second crystalline phase. Example compressive stress inducing layers include SiO 2  and Si 3 N 4 , while example stress inducing materials for providing into layers are Ge, W and Co. Where the compressive stress inducing material is provided on the same side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is less than the first phase crystalline material. Where the compressive stress inducing material is provided on the opposite side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is greater than the first phase crystalline material. Example and preferred crystalline phase materials having two phases are refractory metal suicides, such as TiSi x .

TECHNICAL FIELD

[0001] This invention relates generally to formation of crystallinephase materials in semiconductor wafer processing and more particularlyto formation of refractory metal suicides and crystalline phasetransformation thereof.

BACKGROUND OF THE INVENTION

[0002] Silicides, such as titanium silicide and tungsten silicide, arecommonly utilized electrically conductive materials in semiconductorwafer integrated circuitry fabrication. Such materials are utilized, forexample, as capping layers over underlying conductively dopedpolysilicon material to form electrically conductive lines orinterconnects. Such silicide materials are also utilized at contactbases intermediate an underlying silicon substrate and overlyingconductive polysilicon contact plugging material. Silicides can beprovided by chemical vapor deposition, or by deposition of elementaltitanium or tungsten over an underlying silicon surface. Subsequent hightemperature annealing causes a chemical reaction of the tungsten ortitanium with the underlying silicon to form the silicide compound.

[0003] Titanium silicide (TiSi₂) occurs in two different crystallinestructures or phases referred to as the C49 and C54 phase. The C49structure is base-centered orthorhombic, while the C54 is face-centeredorthorhombic. The C54 phase occurs in the binary-phase diagram while theC49 phase does not. The C49 phase is therefor considered to bemetastable. The C54 phase is a densely packed structure having 7% lessvolume than the C49 phase. The C54 phase also has lower resistivity(higher conductivity) than the C49 phase.

[0004] The C49 phase forms at lower temperatures during a typicalrefractory metal silicide formation anneal (i.e. at from 500° C.-600°C.) and transforms to the C54 phase at higher elevated temperatures(i.e., greater than or equal to about 650° C.). The formation of thehigher resistive C49 phase has been observed to be almost inevitable dueto the lower activation energies associated with it (2.1-2.4 eV) whicharises from the lower surface energy of the C49 phase compared to thatof the more thermodynamically stable C54 phase. Hence, the desired C54phase can be obtained by transforming the C49 phase at elevatedtemperatures.

[0005] Due at least in part to its greater conductivity, the C54 phaseis much more desirable as contact or conductive line cladding material.Continued semiconductive wafer fabrication has achieved denser andsmaller circuitry making silicide layers thinner and narrower in eachsubsequent processing generation. As the silicide layers become thinnerand narrower, the ratio of surface area to volume of material to betransformed from the C49 to the C54 phase increases. This requires everincreasing activation energies to cause the desired transformation,which translates to higher anneal temperatures to effect the desiredphase transformation. In some instances, the temperature must be atleast equal to or greater than 800° C. Unfortunately, heating a silicidelayer to a higher temperature can result in undesired precipitation andagglomeration of silicon in such layer, and also adversely exposes thewafer being processed to undesired and ever increasing thermal exposure.The processing window for achieving or obtaining low resistance silicidephases for smaller line widths and contacts continues to be reduced,making fabrication difficult.

[0006] It would be desirable to develop methods which facilitate the C49to C54 phase transformation in titanium silicide films. Although theinvention was developed with an eye towards overcoming this specificproblem, the artisan will appreciate applicability of the invention inother areas, with the invention only being limited by the accompanyingclaims appropriately interpreted in accordance with the Doctrine ofEquivalents.

SUMMARY

[0007] In but one aspect, the invention provides a method of forming acrystalline phase material. In one implementation, the method isperformed by providing a stress inducing material within or operativelyadjacent a crystalline material of a first crystalline phase prior toanneal. The crystalline material of the first crystalline phase isannealed under conditions effective to transform it to a secondcrystalline phase. The stress inducing material preferably inducescompressive stress within the first crystalline phase during the annealto the second crystalline phase to lower the required activation energyto produce a more dense second crystalline phase.

[0008] In accordance another aspect, the invention provides a method offorming a refractory metal silicide. In one implementation, the methodis performed by forming a refractory metal silicide of a firstcrystalline phase. Compressive stress inducing atoms are provided withinthe refractory metal silicide of the first crystalline phase, with thecompressive stress inducing atoms being larger than silicon atoms of thesilicide. With the compressive stress inducing atoms within the firstphase refractory metal silicide, the refractory metal silicide of thefirst crystalline phase is annealed under conditions effective totransform said silicide to a more dense second crystalline phase.

[0009] In another implementation, a stress inducing material is formedover the opposite side of the wafer over which the first phasecrystalline material is formed.

BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

[0011]FIG. 1 is a diagrammatic sectional view of a semiconductor waferfragment at one processing step in accordance with the invention.

[0012]FIG. 2 is a view of the FIG. 1 wafer at a processing stepsubsequent to that shown by FIG. 1.

[0013]FIG. 3 is a diagrammatic sectional view of another alternatesemiconductor wafer fragment at an alternate processing step inaccordance with the invention.

[0014]FIG. 4 is a view of the FIG. 3 wafer at a processing stepsubsequent to that shown by FIG. 3.

[0015]FIG. 5 is a diagrammatic sectional view of yet another alternatesemiconductor wafer fragment at another alternate processing step inaccordance with the invention.

[0016]FIG. 6 is a view of the FIG. 5 wafer at a processing stepsubsequent to that shown by FIG. 5.

[0017]FIG. 7 is a diagrammatic sectional view of still another alternatesemiconductor wafer fragment at another alternate processing step inaccordance with the invention.

[0018]FIG. 8 is a view of the FIG. 7 wafer at a processing stepsubsequent to that shown by FIG. 7.

[0019]FIG. 9 is a view of the FIG. 7 wafer at a processing stepsubsequent to that shown by FIG. 8.

[0020]FIG. 10 is a diagrammatic sectional view of another alternatesemiconductor wafer fragment at another alternate processing step inaccordance with the invention.

[0021]FIG. 11 is a view of the FIG. 10 wafer at a processing stepsubsequent to that shown by FIG. 10.

[0022]FIG. 12 is a view of the FIG. 10 wafer at a processing stepsubsequent to that shown by FIG. 11.

[0023]FIG. 13 is a diagrammatic sectional view of another alternatesemiconductor wafer fragment at another alternate processing step inaccordance with the invention.

[0024]FIG. 14 is a view of the FIG. 13 wafer at a processing stepsubsequent to that shown by FIG. 13.

[0025]FIG. 15 is a view of the FIG. 13 wafer at a processing stepsubsequent to that shown by FIG. 14.

[0026]FIG. 16 is a view of the FIG. 13 wafer at a processing stepsubsequent to that shown by FIG. 15.

[0027]FIG. 17 is a diagrammatic sectional view of still anotheralternate semiconductor wafer fragment at another alternate processingstep in accordance with the invention.

[0028]FIG. 18 is a view of the FIG. 17 wafer at a processing stepsubsequent to that shown by FIG. 17.

[0029]FIG. 19 is a view of the FIG. 17 wafer at a processing stepsubsequent to that shown by FIG. 18.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] This disclosure of the invention is submitted in furtherance ofthe constitutional purposes of the U.S. Patent Laws “to promote theprogress of science and useful arts” (Article 1, Section 8).

[0031] Referring initially to FIGS. 1 and 2, a semiconductor waferfragment in process is indicated generally with reference numeral 10.Such comprises a substrate 12, for example in the form of a bulkmonocrystalline silicon wafer, having an overlying crystalline materiallayer 14 capable of undergoing a phase transformation from a firstcrystalline phase to a second crystalline phase. Example materialsinclude refractory metal suicides, such as TiSi_(x) (where “x” rangesfrom 0.5 to 2.5 and is predominately “2”) with a first crystalline phasebeing C49 and a second crystalline phase being C54. In the context ofthis document, the term “semiconductive substrate” is defined to meanany construction comprising semiconductive material, including, but notlimited to, bulk semiconductive materials such as a semiconductive wafer(either alone or in assemblies comprising other materials thereon), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure, including, but not limited to, the semiconductive substratesdescribed above.

[0032] A layer 16 of compressive stress inducing material is providedover and in contact with (i.e., “on”) first crystalline phase material14. Layer 16 ideally has a thermal coefficient of expansion which isless than the thermal coefficient of expansion of first crystallinephase material layer 14, particularly at a desired temperature of phasetransformation. Thus, the stress induced in layer 14 at phasetransformation anneal will be of a compressive nature due to the greaterexpansion properties of layer 14 as compared to those of layer 16. Layer16 preferably has a thickness which is equal to or greater than athickness of first phase crystalline material 14 to facilitate inducingdesired stress. An example thickness for layers 14 and 16 is from 100 to2000 Angstroms. Layer 16 is preferably comprised of a material that willnot react with the underlying refractory metal silicide. Example andpreferred materials for layer 16 include SiO₂ (doped or undoped) andSi₃N₄.

[0033] Referring to FIG. 2, first phase crystalline material layer 14 isannealed under conditions effective to transform it to a second moredense and electrically conductive crystalline phase layer 15, such asC54 TiS_(x) in the case of C49 titanium silicide of layer 14. The phasetransformation of a refractory metal silicide from the C49 phase to theC54 phase occurs with the 7% volume reduction or density increase.Compressive stresses induced by the lesser expanding layer 16 duringanneal help to facilitate phase transformation from C49 to C54 by thecompressive forces facilitating this volume reduction, and reduces therequired activation energy for achieving the phase transformation, whichis typically in the prior art provided by temperature anneal alone. Forexample, one prior art processing window for achieving the desired phasetransformation is at a temperature of 800° C. for a tightly controlledperiod of time of from 15-20 seconds for a 350 Angstrom thick C49TiSi_(x) film. Utilizing a compressive stress inducing layer 16 enablestransformation to occur at temperatures less than or equal to about 750°C. in an inert atmosphere (i.e., nitrogen or argon) and with lessstringent time requirements, and thus potentially enables less thermalprocessing of the substrate being treated. An example pressure duringthe anneal would be from 1 Torr to 760 Torr.

[0034] The above first described preferred embodiment is but one exampleof a method of providing a stress inducing material (i.e., Ii layer 16)operatively adjacent a crystalline material of a first crystalline phase(i.e. layer 14) to be effective to induce stress (i.e. in this examplecompressive stress) as the material is annealed to a second crystallinephase. An alternate example of providing a stress inducing materialoperatively adjacent a crystalline material to be transformed to asecondary crystalline phase is to provide such stress inducing materialunder or inwardly of the first crystalline phase material, as describedwith reference to FIGS. 3-4. Such illustrates a semiconductor waferfragment in process generally with reference numeral 18. In FIG. 3, suchcomprises a substrate 20, for example bulk monocrystalline silicon orlayers of material, having an overlying stress inducing material layer22. A layer 24 of crystalline material of the first crystalline phase isprovided outwardly of layer 22, with layer 22 thus being inwardly of orunder layer 24 and in the illustrated example in contact therewith. Inthe example refractory metal silicide transformation of a C49 phase to aC54 phase accompanied by a volume reduction, layer 22 ideally also has acoefficient of expansion which is less than the coefficient of expansionof layer 24. Such facilitates putting layer 24 in compressive stressduring phase transformation. Example materials include those providedabove for layer 16.

[0035] Referring to FIG. 4, annealing is conducted as in the firstdescribed embodiment to transform first crystalline phase material layer24 into a more dense and higher electrically conductive second phasematerial layer 25.

[0036] Yet another alternate example is described with reference toFIGS. 5 and 6. Here, the stress inducing material is provided within thecrystalline material undergoing phase transformation. FIG. 5 illustratesa wafer fragment 30 comprised of some substrate construction 32. Again,such could be a monocrystalline silicon substrate or some othersubstrate assembly atop monocrystalline silicon or some other material.A crystalline material of a first crystalline phase 34, such as arefractory metal silicide, is formed outwardly of substrate 32. Anexample technique, as with the above described embodiment, is bychemical vapor deposition. Alternate examples of providing first phasecrystalline materials for layers 14, 24 and 34 of the first describedembodiments will be described below. Compressive stress inducing atoms36 are provided within first crystalline phase material layer 34. Wherelayer 34 comprises a refractory metal silicide, atoms 36 advantageouslyare provided to be larger than silicon atoms of the silicide to producedesired compressive stress during the anneal to produce the volumereduced phase transformation. Such example atoms include Ge, W and Co ormixtures thereof. One example technique for providing atoms 36 withinlayer 34 is by ion implantation or gas diffusion. An exampleconcentration range is from 10¹⁶-10²² atoms/cm³.

[0037] Referring to FIG. 6, the refractory metal silicide of the firstcrystalline phase is annealed under conditions effective to transformsilicide to a more dense second crystalline phase layer 35, with atoms36 inducing compressive stress during such anneal. Anneal conditions asdescribed above are preferred.

[0038] Thus, the above described embodiments provide alternate examplesof providing stress inducing material proximate (either within oroperatively adjacent) a crystalline material of a first crystallinephase which is to undergo phase transformation to a second crystallinephase. In the described and preferred embodiment, such is accompanied bya volume reduction such that the stress induced is desirably of acompressive nature. The above two techniques could of course also becombined such that the stress inducing material is provided both withinand operatively adjacent the material undergoing phase transformation.Further, the stress inducing material layer might be provided prior tothe subject layer being transformed being at the first crystalline phaseconditions. For example, refractory metals when deposited over siliconcontaining layers, such as polysilicon, undergo chemical transformationto suicides merely under elevated temperature anneal conditions. In eachof the above described embodiments, the stress inducing material wasprovided after the silicide material of the first crystalline phase cameinto existence. An alternate example whereby the stress inducingmaterial is provided before the first phase crystalline material comesinto existence is initially described with reference to FIGS. 7-9.

[0039]FIG. 7 illustrates a wafer fragment 38 comprised of a substrate inthe illustrated form of a silicon, SiO₂ or other material substrate 40having an overlying stress inducing material layer 42, such as SiO₂ orSi₃N₄. An example thickness for layer 42 is from 100-2000 Angstroms. Apolysilicon layer 44 of an example thickness of from 100-2000 Angstromsis provided outwardly of stress inducing material layer 44. Outwardlythereof is provided a refractory metal layer 46, such as elementaltitanium. Thus, a refractory metal (i.e., layer 46) is formed on asilicon containing substrate (i.e. layer 44). The thickness of layer 42is preferably greater than or equal to the combined thickness of layers44 and 46.

[0040] Referring to FIG. 8, wafer 38 is annealed to impart a reaction toform a refractory metal silicide layer 48 of, for example, the first C49crystalline phase from the refractory metal of layer 46 and the siliconof the underlying substrate 44. Example anneal conditions include 600°C., 760 Torr in an inert N₂ or Ar ambient for 20 seconds.

[0041] Referring to FIG. 9, refractory metal silicide layer 48 of thefirst crystalline phase is annealed to transform the first phasesilicide to a more dense second crystalline phase layer 49. Exampleanneal conditions for such phase transformation are as described abovewith respect to the first described embodiments. Alternately, the waferfragment of FIG. 7 could inherently be subjected to the second phasetransformation anneal conditions at the outset, wherein the wafer beingprocessed would inherently be transformed initially to the FIG. 8embodiment and subsequently to the FIG. 9 embodiment.

[0042] The above described embodiment with respect to FIGS. 7-9 could ofcourse also be utilized in conjunction with the FIGS. 5 and 6 embodimentwherein the stress inducing material is provided within the firstcrystalline phase material. For example, the compressive stress inducingatoms can be provided in situ into a refractory metal layer during itsdeposition over an underlying silicon containing substrate. Such couldbe provided for example by sputtering or chemical vapor deposition suchthat the atoms are received within the deposited refractory metal layer.Alternately, ion implanting or gas diffusion doping could be utilized.An example concentration range for the stress inducing atoms is asdescribed above, namely from 10¹⁶-10²² atoms/cm³. Subsequently, therefractory metal layer having the atoms therein would be annealed toform the refractory metal silicide of the first crystalline phase fromthe reaction of the refractory metal and underlying silicon. Continuedor subsequent annealing with the stress inducing atoms in place willfacilitate phase transformation to the second phase.

[0043] Another alternate embodiment is described with reference to FIGS.10-12 whereby the stress inducing layer is provided over or outwardlyof, and thereby operatively adjacent, the titanium layer prior to itsinitial transformation to the first C49 crystalline phase. FIG. 10illustrates a semiconductor wafer fragment 50 comprised of a bulkmonocrystalline silicon substrate and an overlying insulating layer 54,such as SiO₂. A polysilicon layer 56 is provided outwardly of layer 54,with a refractory metal layer 58, such as titanium, provided outwardlyof polysilicon layer 56. A compressive stress inducing layer 60 isprovided over and on titanium layer 58 and preferably has a thicknessequal to or greater than the combined thickness of layers 56 and 58.

[0044] Referring to FIG. 11, suitable annealing conditions for exampleas described above are utilized to transform layers 56 and 58 into a C49first crystalline phase layer 61.

[0045] Referring to FIG. 12, subsequent or continued suitable annealingtransforms first crystalline phase material layer 61 into second C54crystalline phase material layer 63, with the presence of compressivestress inducing layer 60 facilitating such phase transformation asdescribed above.

[0046] The above described embodiments can be utilized in contact or anyother technologies where refractory metal silicides or other crystallinematerials are formed. An example embodiment in utilizing aspects of theabove process in fabricating of electrically conductive lines isdescribed with reference to FIGS. 13-16.

[0047] Referring to FIG. 13, a wafer fragment 65 comprises a bulkmonocrystalline silicon substrate 66 having a gate oxide layer 68provided thereover. A layer of polysilicon 70 is provided outwardly ofgate oxide layer 68 with a silicide layer 72 of a C49 first crystallinephase provided outwardly of polysilicon layer 70. Such can be providedby the above or other conventional techniques. Thus, a semiconductivematerial (i.e. silicon of layer 70) is provided over a substrate, (i.e.material 68 and 66), with a refractory metal silicide 72 of a firstcrystalline phase being provided over and in ohmic electrical connectionwith the semiconductive materials. Layer 70 is desirably conductivelydoped with a suitable conductively enhancing impurity either at thispoint or subsequent in the processing.

[0048] Referring to FIG. 14, layers 72, 70 and 68 are patterned intoconductive lines 74 and 76.

[0049] Referring to FIG. 15, a compressive stress inducing materiallayer 78 is formed outwardly of lines 74 and 76, preferably to athickness at least as great as silicide portion 72. Again, preferredmaterials include SiO₂ or Si₃N₄.

[0050] Referring to FIG. 16, the wafer fragment is annealed as above totransform the silicide material 72 of the first crystalline phase to C54second crystalline phase material 80. Layer 78 can remain, be removed,anisotropically etched or otherwise processed as the circuitry designdictates.

[0051] The above described FIGS. 13-16 embodiment is a technique wherebythe conductive line patterning (in this example a gate line) isconducted before the annealing, and the compressive stress inducingmaterial is provided after the line patterning. Alternately, thepatterning can be conducted after the annealing. Further, compressivestress inducing material can be provided within the first crystallinephase refractory metal silicide layer 72 as is for example describedwith reference to the FIGS. 5 and 6 embodiment. Alternate techniques arealso of course contemplated, as will be appreciated by the artisan.

[0052] A further alternate embodiment is described with reference toFIGS. 17-19. FIG. 17 illustrates a semiconductor wafer fragment 83 (suchas monocrystalline silicon) having opposing first and second sides 84and 85, respectively.

[0053] Referring to FIG. 18, a crystalline material layer 87 of a first17 crystalline phase (such as the exemplary C49 TiSi_(x)) is formed overfirst wafer side 84. A compressive stress inducing material layer 89 isprovided over and on second wafer side 85. Layer 89 is provided to havea thermal coefficient of expansion which exceeds that of layer 87. Anexample material where layer 87 comprises a refractory metal silicide isTiN.

[0054] Referring to FIG. 19, wafer 83 is annealed under conditions suchas that described above to transform first phase material 87 into secondphase material 91. The greater coefficient of layer 89 as compared tolayer 87 causes a degree of bowing which effectively places layer 87 incompressive stress to facilitate its transformation to layer 91.

[0055] In compliance with the statute, the invention has been describedin language more or less specific as to structural and methodicalfeatures. It is to be understood, however, that the invention is notlimited to the specific features shown and described, since the meansherein disclosed comprise preferred forms of putting the invention intoeffect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A method of forming a crystalline phase material comprising:providing a stress inducing material operatively adjacent a crystallinematerial of a first crystalline phase, the stress inducing materialhaving a first thermal coefficient of expansion, the crystallinematerial of the first crystalline phase having a second thermalcoefficient of expansion, the first coefficient being less than thesecond coefficient; and annealing the crystalline material of the firstcrystalline phase under conditions effective to transform it to a secondcrystalline phase.
 2. The method of claim 1 comprising providing thestress inducing material over the first crystalline phase material. 3.The method of claim 1 comprising providing the stress inducing, materialunder the first crystalline phase material.
 4. The method of claim 1comprising providing the stress inducing material to a thickness whichis equal to or greater than a thickness of the first phase crystallinematerial.
 5. The method of claim 1 comprising providing the stressinducing material over and in contact with the first crystalline phasematerial.
 6. The method of claim 1 comprising providing the stressinducing material under and in contact with the first crystalline phasematerial.
 7. The method of claim 1 wherein the stress inducing materialcomprises SiO₂.
 8. The method of claim 1 wherein the stress inducingmaterial comprises Si₃N₄.
 9. The method of claim 1 wherein the stressinducing material is provided before said annealing.
 10. A method oflowering required activation energy in transforming a crystallinematerial from a first crystalline phase to a more dense secondcrystalline phase comprising providing a compressive stress inducingmaterial operatively adjacent the material of the first crystallinephase during an anneal to the second crystalline phase, with thecompressive stress inducing material having a first thermal coefficientof expansion, the crystalline material of the first crystalline phasehaving a second thermal coefficient of expansion, the first coefficientbeing less than the second coefficient.
 11. A method of forming acrystalline phase material comprising: providing a semiconductor waferhaving opposing first and second sides; forming a crystalline materialof a first crystalline phase over the first side of the wafer; forming astress inducing material over the second side of the wafer, the stressinducing material having a first thermal coefficient of expansion, thecrystalline material of the first crystalline phase having a secondthermal coefficient of expansion, the first coefficient being greaterthan the second coefficient; and annealing the crystalline material ofthe first crystalline phase under conditions effective to transform itto a second crystalline phase.
 12. The method of claim 11 comprisingforming the stress inducing material on the second side of the wafer.13. The method of claim 11 wherein the crystalline material comprises arefractory metal silicide, and the stress inducing material comprisesTiN.
 14. The method of claim 11 wherein the crystalline materialcomprises TiSi_(x), the first crystalline phase is C49, the secondcrystalline phase is C54, and the stress inducing material comprisesTiN.
 15. The method of claim 11 wherein the crystalline materialcomprises TiSi_(x), the first crystalline phase is C49, and the secondcrystalline phase is C54
 16. The method of claim 11 wherein the stressinducing material is provided before said annealing.
 17. A method offorming a crystalline phase material comprising: providing a stressinducing material within a crystalline material of a first crystallinephase; and annealing the crystalline material of the first crystallinephase under conditions effective to transform it to a second crystallinephase.
 18. The method of claim 17 comprising ion implanting the stressinducing material into the first crystalline phase material.
 19. Themethod of claim 17 comprising in situ providing the stress inducingmaterial into the first crystalline phase material during deposition ofthe first crystalline phase material.
 20. The method of claim 17comprising providing stress inducing atoms within the first crystallinephase material to a concentration from 10¹⁶-10²² atoms/cm³.
 21. A methodof forming a refractory metal silicide comprising: forming a refractorymetal silicide of a first crystalline phase; providing compressivestress inducing atoms within the refractory metal silicide of the firstcrystalline phase, the compressive stress inducing atoms being largerthan silicon atoms of the silicide; and with the compressive stressinducing atoms within the first phase refractory metal silicide,annealing the refractory metal silicide of the first crystalline phaseunder conditions effective to transform said silicide to a more densesecond crystalline phase.
 22. The method of claim 21 wherein therefractory metal silicide comprises TiSi_(x), and the first crystallinephase is C49 and the second crystalline phase is C54.
 23. The method ofclaim 21 comprising ion implanting the compressive stress inducing atomsinto the first crystalline phase refractory metal silicide.
 24. Themethod of claim 21 comprising in situ providing the compressive stressinducing atoms into a refractory metal layer during deposition of saidrefractory metal layer over an underlying silicon containing substrate;and annealing the refractory metal layer to form said refractory metalsilicide of the first crystalline phase from the refractory metal andsilicon of the underlying substrate.
 25. The method of claim 21 whereinthe compressive stress inducing atoms are selected from the groupconsisting of Ge, W and Co, or mixtures thereof.
 26. The method of claim21 comprising providing the atoms to a concentration within therefractory metal silicide from 10¹⁶-10²² atoms/cm³.
 27. A method offorming an electrically conductive line comprising: forming asemiconductive material over a substrate; forming a refractory metalsilicide of a first crystalline phase over and in ohmic electricalconnection with the semiconductive material; providing a compressivestress inducing material proximate the refractory metal silicide of thefirst crystalline phase; after providing the compressive stress inducingmaterial, annealing the refractory metal silicide of the firstcrystalline phase to transform said silicide to a more dense and moreelectrically conductive second crystalline phase; and patterning thesemiconductive material and the refractory metal silicide into aconductive line.
 28. The method of claim 27 wherein the compressivestress inducing material is provided within the refractory metalsilicide of the first crystalline phase.
 29. The method of claim 27wherein the compressive stress inducing material is provided operativelyadjacent the refractory metal silicide of the first crystalline phase.30. The method of claim 27 wherein the patterning is conducted beforethe annealing.
 31. The method of claim 27 wherein the patterning isconducted before the annealing, and the compressive stress inducingmaterial is provided after the patterning.
 32. The method of claim 27wherein the patterning is conducted after the annealing.
 33. The methodof claim 27 wherein the refractory metal silicide comprises TiSi_(x),and the first crystalline phase is C49 and the second crystalline phaseis C54.
 34. The method of claim 27 comprising providing the compressivestress inducing material over the first crystalline phase refractorymetal silicide.
 35. The method of claim 27 comprising providing thecompressive stress inducing material over the first crystalline phaserefractory metal silicide, the compressive stress inducing materialhaving, a thickness equal to or greater than a thickness of the firstphase refractory metal silicide.
 36. The method of claim 27 comprisingproviding the compressive stress inducing material under the firstcrystalline phase refractory metal silicide.
 37. The method of claim 27wherein the compressive stress inducing material comprises SiO₂.
 38. Themethod of claim 27 wherein the compressive stress inducing materialcomprises Si₃N₄.
 39. The method of claim 27 wherein the compressivestress inducing material is provided both in and operatively adjacentthe first phase crystalline silicide.
 40. A method of forming arefractory metal silicide comprising: forming a refractory metal on asilicon containing substrate; providing a compressive stress inducingmaterial proximate the refractory metal; after providing the compressivestress inducing material, annealing the refractory metal to form arefractory metal silicide of a first crystalline phase from therefractory metal and silicon of the underlying substrate; and annealingthe refractory metal silicide of the first crystalline phase totransform the first phase silicide to a more dense second crystallinephase.
 41. The method of claim 40 wherein the refractory metal silicidecomprises TiSi_(x), and the first crystalline phase is C49 and thesecond crystalline phase is C54.
 42. The method of claim 40 comprisingproviding the compressive stress inducing material within the firstcrystalline phase refractory metal silicide.
 43. The method of claim 40comprising providing the compressive stress inducing material over thefirst crystalline phase refractory metal silicide.
 44. The method ofclaim 40 comprising providing the compressive stress inducing materialover the first crystalline phase refractory metal silicide to athickness equal to or greater than a thickness of the first phaserefractory metal silicide.
 45. The method of claim 40 comprisingproviding the compressive stress inducing material under the firstcrystalline phase refractory metal silicide.
 46. A method of forming acrystalline phase material comprising: forming a crystalline material ofa first crystalline phase over a substrate; forming a layer over thefirst phase crystalline material; and after forming the layer, annealingthe crystalline material of the first crystalline phase under conditionseffective to transform it to a second crystalline phase.
 47. The methodof claim 46 wherein the crystalline material comprises TiSi_(x), thefirst crystalline phase is C49, and the second crystalline phase is C5448. A method of forming a crystalline phase material comprising: forminga crystalline material of a first crystalline phase over a substrate;providing dopant atoms to within the first phase crystalline material;and after providing the dopant atoms, annealing the crystalline materialof the first crystalline phase under conditions effective to transformit to a second crystalline phase.
 49. The method of claim 48 wherein thecrystalline material comprises TiSi_(x), the first crystalline phase isC49, and the second crystalline phase is C54
 50. The method of claim 48wherein the providing comprises ion implanting.
 51. The method of claim48 wherein the providing comprises gas diffusion doping.